#DIODE

[2024 OPEN ACCESS]
Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes
2024 Appl. Phys. Express 17 016503

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#APEX
#OpenAccess
#Physics
#avalanche
#vertical
#GaN
#silicon
#diode

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[2024 OPEN ACCESS]
High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD
2024 Appl. Phys. Express 17 014005

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#APEX
#OpenAccess
#Physics
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#Schottky
#diode
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[Open Access]
Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealing
2025 Appl. Phys. Express 18 091002

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OPEN ACCESS
Temperature dependence of barrier height in a Ni/β-Ga2O3 Schottky barrier diode precisely determined by the analysis based on the thermionic emission-diffusion model
2025 Appl. Phys. Express 18 074001

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#OpenAccess
#Physics
#diode
#gallium
#oxide

[2025 OPEN ACCESS]
Ultrashort gain-switched pulse trains from laser diodes characterized by a single-shot up-conversion time microscope
2025 Appl. Phys. Express 18 072002

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#OpenAccess
#Physics
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#laser
#diode
#spectroscopy
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[2024 OPEN ACCESS]
Franz–Keldysh effect in β-Ga2O3 Schottky barrier diode under high reverse bias voltage
2024 Appl. Phys. Express 17 124001

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#Physics
#OpenAccess
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#FranzKeldysh
#Photocurrent
#photoemission
#Schottky
#diode

[Spotlights]
Demonstration of UV-A stimulated emission from optical pumping with a nano-porous cladding layer
2024 Appl. Phys. Express 17 122001

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Spotlights
iopscience.iop.org/journal/1882...

#APEX
#Physics
#OA
#オープンアクセス
#GaN
#Ultraviolet
#Diode
#Optical
#MOCVD

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[APEX REVIEW : Open Access]
Fundamentals and recent advances of terahertz resonant tunneling diodes
2024 17 070101
Safumi Suzuki, Masahiro Asada, Tokyo Institute of Technology

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[OPEN ACCESS]
Ni/rutile GeO2 vertical Schottky barrier diode on Nb-doped TiO2 substrate using Sb-doped graded GeySn1−yO2 buffer layers
2025 Appl. Phys. Express 18 041001

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#OpenAccess
#Physics
#rutile
#germanium
#dioxide
#Schottky
#diode
#powerdevice
#CVD